US-China trade war could make all memory fabs in China inefficient – Community News
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US-China trade war could make all memory fabs in China inefficient

The ongoing trade war between the US and China is multifaceted, affecting or will affect dozens of industries and tens of thousands of companies. Apparently, the confrontation between the two powers could make all computer memory factories in China inefficient compared to facilities outside the country, as the US does not want advanced equipment installed anywhere in China. According to Reuters, this has already affected SK Hynix’s plans for its Wuxi fab.

SK Hynix’s C2 semiconductor plant in Wuxi, China, produces a significant portion of the company’s DRAM output and some NAND memory. In recent years, SK Hynix has expanded its cleanroom space in the fab at least once, but in order to introduce the next generation of DRAM process technologies to the factory, it needs to equip it with extreme ultraviolet (EUV) lithography tools and other leading edge machines. But it looks like the company is going to have some problems with this, Reuters reports.

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